esh1b, esh1c & esh1d document number 88890 10-aug-05 vishay general semiconductor www.vishay.com 1 do-214ac (sma) new product surface mount ultrafast plastic rectifiers major ratings and characteristics i f(av) 1 a v rrm 100 v, 150 v, 200 v t rr 25 ns v f 0.90 v t j max. 175 c features low profile package ideal for automated placement glass passivated chip junction ultrafast recovery times for high efficiency low forward volt age, low power loss meets msl level 1 per j-sts-020c solder dip 260 c, 40 seconds typical applications for use in secondary rectification and freewheeling for ultrafast switching speeds ac-to-ac and dc-to-dc converters in high temperature conditions for both consumer and automotive applications mechanical data case: do-214ac (sma) epoxy meets ul 94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002b and jesd22-b102d e3 suffix for commercial grade, he3 suffix for high reliability grade (aec q101 qualified) polarity: color band denotes cathode end maximum ratings t a = 25 c, unless otherwise specified parameter symbol esh1b esh1c esh1d unit device marking code ehb ehc ehd maximum repetitive peak reverse voltage v rrm 100 150 200 v maximum rms voltage v rms 70 105 140 v maximum dc blocking voltage v dc 100 150 200 v maximum average forward rectified current at t l = 150 c i f(av) 1.0 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load (jedec method) i fsm 50 a operating junction and storage temperature range t j , t stg - 55 to + 175 c
www.vishay.com 2 document number 88890 10-aug-05 esh1b, esh1c & esh1d vishay general semiconductor electrical characteristics t a = 25 c, unless otherwise specified note: (1) pulse test: 300 s pulse width, 1 % duty cycle thermal characteristics t a = 25 c, unless otherwise specified note: (1) units mounted on p.c.b. with 5.0 x 5.0 mm (0.013 mm thick) land areas. ratings and characteristics curves (t a = 25 c unless otherwise specified) parameter test condition symbol value unit maximum instantaneous forward voltage at i f = 0.7 a (1) at i f = 1 a v f 0.87 0.90 v maximum dc reverse current at rated dc blocking voltage t a = 25 c t a = 125 c i r 1.0 25 a maximum reverse current at v r = 20 v, t j = 150 c i r 50 a maximum reverse recovery time at i f = 0.5 a, i r = 1 a, i rr = 0.25 a t rr 25 ns typical reverse recovery time at i f = 0.6 a, v r = 30 v di/dt = 50 a/s, i rr = 10 % irm t j = 25 c t j = 100 c t rr 25 35 ns typical stored charge at i f = 0.6 a, v r = 30 v di/dt = 50 a/s, i rr = 10 % irm t j = 25 c t j = 100 c q rr 10 15 nc typical junction capacitance at 4.0 v, 1 mhz c j 25 pf parameter symbol esh1b esh1c esh1d unit typical thermal resistance (1) r ja r jl 85 30 c/w figure 1. maximum forward current derating curve 0 1.2 95 105 115 125 135 145 155 165 a v erage for w ard rectified c u rrent (a) lead temperat u re (c) 0. 8 1.0 0.2 0.4 0.6 175 t l meas u red at the cathode b and terminal figure 2. maximum non-repetitive peak forward surge current peak for w ard s u rge c u rrent (a) nu m b er of cycles at 60 hz 1 10 100 10 40 20 50 30 0
esh1b, esh1c & esh1d document number 88890 10-aug-05 vishay general semiconductor www.vishay.com 3 package dimensions in inches (millimeters) figure 3. typical revers e leakage characteristics figure 4. typical instantaneous forward characteristics t j = 175 c t j = 125 c t j = 150 c t j = 125 c t j = 100 c percent of rated peak re v erse v oltage ( % ) 100 10 0.1 0.01 0.001 1 20 40 60 8 0 100 instantaneo u s re v erse leakage c u rrent ( a) instantaneo u s for w ard c u rrent (a) instantaneo u s for w ard v oltage ( v ) 0.2 0.4 0.6 0. 8 1 0.01 0.1 1 10 100 1.2 1.4 t j = 150 c t j = 125 c t j = 175 c t j = 25 c figure 5. typical junction capacitance figure 6. typical trans ient thermal impedance re v erse v oltage ( v ) j u nction capacitance (pf) 0.1 1 10 100 10 100 0 0.1 1 10 100 1 10 100 tp, p u lse d u ration (sec.) transient thermal impedance ( c/ w ) 0.01 0.157 (3.99) 0.177 (4.50) 0.006 (0.152) 0.012 (0.305) 0.030 (0.76) 0.060 (1.52) 0.00 8 (0.203) 0.194 (4.93) 0.20 8 (5.2 8 ) 0.100 (2.54) 0.110 (2.79) 0.07 8 (1.9 8 ) 0.090 (2.29) 0.049 (1.25) 0.065 (1.65) cathode band 0 (0) do-214ac (sma) 0.074 max. (1. 88 max.) 0.20 8 (5.2 8 ) ref 0.066 mi n . (1.6 8 mi n .) 0.060 mi n . (1.52 mi n .) mountin g pad layout
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